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| PD - 94330 HF10D120ACE Hexfred Die in Wafer Form Features * * * * * * * * * * GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation Qualified for Industrial Market Benefits 1200V IF(nom)=5A VF(typ)= 1.59V @ IF(nom) @ 25C Motor Control Antiparallel Diode 125mm Wafer Electrical Characteristics (Wafer Form) Parameter VF BVR IRM Description Forward Voltage Drop Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (min, max) 1.44V min, 1.82V max 1200V min 1.25A max Test Conditions IF = 1.875A, TJ = 25C TJ = 25C, IR = 100A TJ = 25C, VR = 1200V Mechanical Data Nominal Backmetal Composition, (Thickness) Nominal Front Metal Composition, (Thickness) Dimensions Wafer Diameter Wafer Thickness, Tolerance Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Recommended Die Attach Conditions Cr- Ni - Ag, (1kA - 4kA - 6kA) 99% Al/1% Si, (3m) 0.90" x 0.90" 125mm, with std. < 100 > flat 310m, +/-15m 01 - 5523 100m 0.25mm diameter minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline www.irf.com Page 1 10/03/01 HF10D120ACE Hexfred Die in Wafer Form Fig.1 - Typical Diode Recovery VCC = 600V; Rg = 47; TJ = 125C; L = 200H; Driver = IRGB5B120K 100 0 -100 -200 -300 -400 -500 -600 -700 -800 -0.25 6 4 2 0 -2 -4 -6 -8 -10 -12 1.00 Current Voltage ( V ) Voltage 0.00 0.25 time ( s ) 0.50 0.75 Fig.2 - Typical Diode Forward Characteristic tp=300s 50 45 40 35 IF (A) 30 25 20 15 10 5 0 0 2 V www.irf.com F Fig. 3 - Diode Recovery Circuit DUT L - 40C 25C 125C DRIVER Rg Current ( A ) VCC 4 (V) 6 Page 2 10/03/01 |
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